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Currently, wafers of aluminum nitride cut from bulk aluminum nitride crystals (AlN) grown by sublimation are considered promising substrates for obtaining light-emitting diode structures based on

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Tilt-view scanning electron microscope (SEM) images of two typical suspended spiral-shaped cantilevers (1,3) (a) and (3,4) (b) with contacted AlN layer (darker region) on their top surfaces, and a wafer thick 3D-micromachined Si seismic mass beneath. The darker circle in the center corresponds to a Ti/Au disc applied for laser reflection

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Technology of making freestanding gallium nitride (GaN) wafers has been matured at length. Gallium nitride is rigid but fragile. Chamfering of a periphery of a GaN wafer is difficult. At present edges are chamfered by a rotary whetstone of gross granules with weak pressure. Minimum roughness of the chamfered edges is still about Ra 10 μm to Ra 6

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The 6\" wafer is shipped in a 6\" wafer carrier, the diced pieces are shipped in a Gel-Pak ® box. The special clean dicing process involves coating the wafer with photo resist before dicing and removing it after dicing which produces debris-free SiO 2 substratres. All products are packed in

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We present a fully-integrated monolithic aluminum nitride optomechanical device in which lateral vibrations generated by a piezoelectric contour mode acoustic ring resonator are used to produce amplitude modulation of an optical signal in a whispering gallery mode photonic ring resonator. Acoustic and optical resonances are independently characterized in this contour mode optomechanical

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In order to achieve concentric distribution of temperatures over a wafer supporting surface and improve the uniformity of heating, a heating resistor 4 having a configuration for providing a predetermined heater pattern buried in a ceramic substrate 2 constituting a wafer heating apparatus is made from arc portions 4a-4g which have different radii and are arranged to form concentric circles

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